2n2221a 2N2222A npn silicon transistor description: the central semiconductor 2n2221a and 2N2222A types are silicon npn epitaxial planar transistors designed for small signal, general purpose switching applications. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v continuous collector current i c 800 ma power dissipation p d 400 mw power dissipation (t c =25c) p d 1.2 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 438 c/w thermal resistance jc 146 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 10 na i cbo v cb =60v, t a =150c 10 a i cev v ce =60v, v eb =3.0v 10 na i ebo v eb =3.0v 10 na bv cbo i c =10a 75 v bv ceo i c =10ma 40 v bv ebo i e =10a 6.0 v v ce(sat) i c =150ma, i b =15ma 0.3 v v ce(sat) i c =500ma, i b =50ma 1.0 v v be(sat) i c =150ma, i b =15ma 0.6 1.2 v v be(sat) i c =500ma, i b =50ma 2.0 v 2n2221a 2N2222A min max min max h fe v ce =10v, i c =0.1ma 20 - 35 - h fe v ce =10v, i c =1.0ma 25 - 50 - h fe v ce =10v, i c =10ma 35 - 75 - h fe v ce =10v, i c =10ma, t a =-55c 15 - 35 - h fe v ce =10v, i c =150ma 40 120 100 300 h fe v ce =1.0v, i c =150ma 20 - 50 - h fe v ce =10v, i c =500ma 25 - 40 - to-18 case r3 (30-january 2012) www.centralsemi.com
2n2221a 2N2222A npn silicon transistor to-18 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c) 2n2221a 2N2222A symbol test conditions min max min max units f t v ce =20v, i c =20ma, f=100mhz 250 - 300 - mhz c ob v cb =10v, i e =0, f=100khz - 8.0 - 8.0 pf c ib v eb =0.5v, i c =0, f=100khz - 25 - 25 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 3.5 2.0 8.0 k h ie v ce =10v, i c =10ma, f=1.0khz 0.2 1.0 0.25 1.25 k h re v ce =10v, i c =1.0ma, f=1.0khz - 5.0 - 8.0 x10 -4 h re v ce =10v, i c =10ma, f=1.0khz - 2.5 - 4.0 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 30 150 50 300 h fe v ce =10v, i c =10ma, f=1.0khz 50 300 75 375 h oe v ce =10v, i c =1.0ma, f=1.0khz 3.0 15 5.0 35 s h oe v ce =10v, i c =10ma, f=1.0khz 10 100 25 200 s rbc c v cb =10v, i e =20ma, f=31.8mhz - 150 - 150 ps nf v ce =10v, i c =100a, r s =1.0k, f=1.0khz - - - 4.0 db t d v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma - 10 - 10 ns t r v cc =30v, v be =0.5v, i c =150ma, i b1 =15ma - 25 - 25 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma - 225 - 225 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma - 60 - 60 ns www.centralsemi.com r3 (30-january 2012)
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